Power metallization degradation monitoring on power MOSFETs by means of concurrent degradation processes

نویسندگان

چکیده

Abstract An on-chip solution for health monitoring of semiconductor power switches subjected to thermo-mechanical metal fatigue degradation is proposed. The detection relies on the correlation between progress main failure mechanism, which critical functionality device, and a parallel non-critical sensing structure using different mechanism. Both mechanisms are driven by same cyclic load. This study specifically develops detecting metallization aging through electrically detectable ratcheting behavior in routing layer underneath. Experiments have been carried out dedicated test with electrical structure. Meanwhile, was observed via scanning electron microscopy regular intervals. Results show that proposed approach will reliably work only repeated high overload events.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

application of upfc based on svpwm for power quality improvement

در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...

15 صفحه اول

A Non-Intrusive Method for Monitoring the Degradation of MOSFETs

Highly reliable embedded systems have been widely applied in the fields of aerospace, nuclear power, high-speed rail, etc., which are related to security and economic development. The reliability of the power supply directly influences the security of the embedded system, and has been the research focus of numerous electronic information and energy studies. The degradation of power modules occu...

متن کامل

A thorough investigation of MOSFETs NBTI degradation

An overview of evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a phys...

متن کامل

Current Sensing Power MOSFETs

SENSEFET PRODUCT Current sensing power MOSFETs provide a highly effective way of measuring load current in power conditioning circuits. Conceptually simple in nature, these devices split load current into power and sense components, and thereby allow signal level resistors to be used for sampling. Since this technique results in higher efficiency and lower costs than competing alternatives, und...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Power Electronics

سال: 2022

ISSN: ['2093-4718', '1598-2092']

DOI: https://doi.org/10.1007/s43236-022-00463-5