Power metallization degradation monitoring on power MOSFETs by means of concurrent degradation processes
نویسندگان
چکیده
Abstract An on-chip solution for health monitoring of semiconductor power switches subjected to thermo-mechanical metal fatigue degradation is proposed. The detection relies on the correlation between progress main failure mechanism, which critical functionality device, and a parallel non-critical sensing structure using different mechanism. Both mechanisms are driven by same cyclic load. This study specifically develops detecting metallization aging through electrically detectable ratcheting behavior in routing layer underneath. Experiments have been carried out dedicated test with electrical structure. Meanwhile, was observed via scanning electron microscopy regular intervals. Results show that proposed approach will reliably work only repeated high overload events.
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ژورنال
عنوان ژورنال: Journal of Power Electronics
سال: 2022
ISSN: ['2093-4718', '1598-2092']
DOI: https://doi.org/10.1007/s43236-022-00463-5